PSMN1R0-30YLC_11 PHILIPS [NXP Semiconductors], PSMN1R0-30YLC_11 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R0-30YLC_11
• Description: N-channel 30 V 1.15 m? logic level MOSFET in LFPAK using NextPower technology
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
Table 7.
PSMN1R0-30YLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
100
75
50
25
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
3.0
10.0
4.5
2.8
…continued
0.5
V
V
DS
GS
(V)
All information provided in this document is subject to legal disclaimers.
003a a e 943
(V) =
2.6
2.4
2.2
Conditions
V
R
V
T
I
see
I
V
V
dI
see
S
S
1
j
DS
GS
GS
GS
G(ext)
S
= 25 °C
= 25 A; V
= 25 A; dI
Rev. 4 — 4 July 2011
/dt = -100 A/µs; V
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
Figure 17
Figure 18
= 15 V; R
= 0 V; V
= 0 V; V
= 0 V; I
= 4.7 Ω
GS
S
S
DS
DS
/dt = -100 A/µs;
= 25 A;
L
Fig 7.
= 0 V; T
= 0.6 Ω; V
= 15 V; f = 1 MHz;
= 15 V
R
(m)
DS on
DS
8
6
4
2
0
j
of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
= 15 V;
= 25 °C;
GS
= 4.5 V;
4
PSMN1R0-30YLC
Min
-
-
-
-
-
-
-
-
-
-
8
Typ
44
77
108
60
35.2
0.8
45
67
28.5
16.5
12
© NXP B.V. 2011. All rights reserved.
003a a e 944
V
GS
-
-
-
Max
-
-
-
-
1.1
-
-
(V)
16
Unit
ns
ns
ns
ns
nC
V
ns
nC
ns
ns
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