PSMN1R0-30YLC_11 PHILIPS [NXP Semiconductors], PSMN1R0-30YLC_11 Datasheet - Page 8

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PSMN1R0-30YLC_11

Manufacturer Part Number
PSMN1R0-30YLC_11
Description
N-channel 30 V 1.15 m? logic level MOSFET in LFPAK using NextPower technology
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
NXP Semiconductors
PSMN1R0-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S )
(A)
g
I
D
fs
10
10
10
10
10
10
300
240
180
120
60
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
Min
1
Typ
50
Max
2
75
V
All information provided in this document is subject to legal disclaimers.
003a a e 949
003a a e 948
GS
I
D
(V)
(A)
100
3
Rev. 4 — 4 July 2011
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
(A)
V
I
D
GS (th)
(V)
100
75
50
25
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
Max (1mA)
Min (5mA)
0
1
PSMN1R0-30YLC
T
j
= 150 C
I
D
60
= 5mA
2
T
j
1mA
= 25 C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a e 947
003a a e 951
T
GS
j
( C)
(V)
180
4
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