PSMN8R0-30YL_1105 PHILIPS [NXP Semiconductors], PSMN8R0-30YL_1105 Datasheet - Page 4

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PSMN8R0-30YL_1105

Manufacturer Part Number
PSMN8R0-30YL_1105
Description
N-channel 8.3 m? 30 V TrenchMOS logic level FET in LFPAK
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN8R0-30YL
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.2
0.1
0.05
0.02
Thermal characteristics
δ = 0.5
single shot
Parameter
thermal resistance from junction to mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 16 May 2011
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
10
-3
Conditions
see
Figure 4
10
-2
PSMN8R0-30YL
Min
-
10
P
-1
tp
Typ
1.35
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
δ =
003aaf420
Max
2.7
tp
T
t
1
Unit
K/W
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