PSMN8R0-40PS,127 NXP Semiconductors, PSMN8R0-40PS,127 Datasheet

MOSFET N-CH 40V 77A TO-220AB3

PSMN8R0-40PS,127

Manufacturer Part Number
PSMN8R0-40PS,127
Description
MOSFET N-CH 40V 77A TO-220AB3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN8R0-40PS,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
1262pF @ 12V
Power - Max
86W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.6 mOhms
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
77 A
Power Dissipation
86 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-4893-5
934063913127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
[1]
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
High efficiency due to low switching
and conduction losses
DC-to-DC convertors
Load switching
Measured 3 mm from package.
PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
Figure 15
= 25 °C; V
= 25 °C; see
= 20 V; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 25 A;
Figure 13
Figure
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
14;
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
3.8
6.2
Max
40
77
86
-
7.6
Unit
V
A
W
nC
mΩ

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PSMN8R0-40PS,127 Summary of contents

Page 1

... PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... Table 3. Ordering information Type number Package Name Description PSMN8R0-40PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN8R0-40PS_2 Product data sheet PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Simplified outline SOT78 (TO-220AB) Rev. 02 — 25 June 2009 Graphic symbol D G ...

Page 3

... ° ° j(init Ω unclamped 003aad067 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 25 June 2009 PSMN8R0-40PS Min Max - - Figure 3 - 309 - 86 -55 175 -55 175 - 77 - 309 ≤ sup 03aa16 50 100 ...

Page 4

... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN8R0-40PS_2 Product data sheet N-channel 40 V 7.6 mΩ standard level MOSFET Limit DSon Rev. 02 — 25 June 2009 PSMN8R0-40PS 003aad298 10 μs 100 μ 100 © NXP B.V. 2009. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN8R0-40PS_2 Product data sheet N-channel 40 V 7.6 mΩ standard level MOSFET Conditions see Figure Rev. 02 — 25 June 2009 PSMN8R0-40PS Min Typ Max Unit - 1.2 1.74 K/W 003aad068 t p δ ...

Page 6

... DS GS see Figure 14; see Figure see Figure see Figure 14; see Figure see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) Rev. 02 — 25 June 2009 PSMN8R0-40PS Min Typ Max Unit 4 1.5 µ µ 100 100 mΩ [2] - 6.2 7.6 mΩ Ω ...

Page 7

... A/µ ° 003aad058 20 R DSon (mΩ 5 4 (V) DS Fig 6. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 25 June 2009 PSMN8R0-40PS Min Typ Max - 0.85 1 003aad059 V ( 100 I (A) D © NXP B.V. 2009. All rights reserved. Unit 150 ...

Page 8

... Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad065 50 R DSon (mΩ 100 I (A) D Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 02 — 25 June 2009 PSMN8R0-40PS 003aad064 C iss C rss (V) GS 003aad066 (V) GS © NXP B.V. 2009. All rights reserved ...

Page 9

... N-channel 40 V 7.6 mΩ standard level MOSFET 03aa35 5 V GS(th) (V) max − (V) GS Fig 12. Gate-source threshold voltage as a function of junction temperature 03aa27 V Fig 14. Gate charge waveform definitions 120 180 ( ° Rev. 02 — 25 June 2009 PSMN8R0-40PS 003aad280 max typ min 0 60 120 T (° GS(pl) V GS(th GS1 GS2 ...

Page 10

... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° 0.3 0.6 0.9 Rev. 02 — 25 June 2009 PSMN8R0-40PS 003aad063 C iss C oss C rss (V) DS 003aad061 = 25 °C 1.2 V (V) SD © NXP B.V. 2009. All rights reserved. ...

Page 11

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 25 June 2009 PSMN8R0-40PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...

Page 12

... Status changed from objective to product PSMN8R0-40PS_1 20090511 PSMN8R0-40PS_2 Product data sheet N-channel 40 V 7.6 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - Rev. 02 — 25 June 2009 PSMN8R0-40PS Supersedes PSMN8R0-40PS_1 - © NXP B.V. 2009. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 25 June 2009 PSMN8R0-40PS © NXP B.V. 2009. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN8R0-40PS_2 All rights reserved. Date of release: 25 June 2009 ...

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