NTD6600N-1 ONSEMI [ON Semiconductor], NTD6600N-1 Datasheet

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NTD6600N-1

Manufacturer Part Number
NTD6600N-1
Description
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
NTD6600N
Power MOSFET
100 V, 12 A, N−Channel,
Logic Level DPAK
Features
Typical Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current − Continuous @ T
Drain Current
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
Thermal Resistance
Maximum Temperature for Soldering
Discrete Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a
Avalanche Energy Specified
Logic Level
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
pad size.
Derate above 25°C
− Continuous
(V
I
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, (1/8″ from case for 10 s)
L
DD
= 12 Apk, L = 1.0 mH, R
= 50 Vdc, V
− Continuous @ T
− Pulsed (Note 3)
Rating
J
GS
= 25°C
= 5.0 Vdc,
(T
C
GS
A
A
= 25°C unless otherwise noted)
G
= 25°C (Note 1)
= 25°C (Note 2)
= 1.0 MW)
= 25 W)
A
A
= 25°C
=100°C
Symbol
T
V
V
R
R
R
V
J
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
D
D
AS
D
L
stg
−55 to
Value
+175
± 20
56.6
0.38
1.76
1.28
2.65
100
100
117
260
9.0
12
44
72
85
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 2
1
V
2
(BR)DSS
100 V
3
3
Y
WW
NT6600
G
ORDERING INFORMATION
4
4
G
(Surface Mounted)
http://onsemi.com
(Straight Lead)
118 mW @ 5.0 V
CASE 369C
CASE 369D
R
STYLE 2
STYLE 2
DPAK−3
N−Channel
DS(on)
DPAK
= Year
= Work Week
= Device Code
= Pb−Free Package
D
Publication Order Number:
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
1
NTD6600N/D
Drain
Drain
Drain
Drain
4
4
2
2
I
D
12 A
MAX
3
Source
3
Source

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NTD6600N-1 Summary of contents

Page 1

... DIAGRAMS 4 Drain 4 DPAK CASE 369C (Surface Mounted) STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D (Straight Lead) STYLE Gate Drain Source Y = Year WW = Work Week NT6600 = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD6600N/D ...

Page 2

... Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD6600N NTD6600N−1 NTD6600N−1G NTD6600NT4 NTD6600NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD6600N (T = 25°C unless otherwise noted) C ...

Page 3

... Figure 3. On−Resistance versus Drain Current and Temperature 2 2. 2.0 1.75 1.5 1.25 1.0 0.75 0.5 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD6600N TYPICAL CHARACTERISTICS 25° ≥ 3 3 150° 2 Figure 2 ...

Page 4

... V GS SINGLE PULSE T = 25°C 100 C 10 1.0 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTD6600N TYPICAL CHARACTERISTICS 25° ...

Page 5

... 0.13 (0.005 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD6600N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 6

... J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD6600N/D ...

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