AOL1448 AOSMD [Alpha & Omega Semiconductors], AOL1448 Datasheet - Page 2

• Manufacturer Part Number: AOL1448
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: AOSMD [Alpha & Omega Semiconductors]

AOL1448
Alpha & Omega Semiconductor, Ltd.
A: The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 175° C may be used if the PCB allow s it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
initial T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
Rev1 : Jan-09
J
=25° C.
JA
is the sum of the thermal impedence from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
DSM
is measured with the device mounted on 1in
is based on R
D
is based on T
Parameter
J
J(MAX)
=25° C unless otherwise noted)
JA
and the maximum allowed junction temperature of 150° C. The value in any given application depends
J(MAX)
=175° C. The SOA curve provides a single pulse ratin g.
=175° C, using junction-to-case thermal resistance, and is more useful in setting the upper
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=20A, dI/dt=500A/ s
=20A, dI/dt=500A/ s
J(MAX)
=250 A, V
=1A,V
GEN
FR-4 board with 2oz. Copper, in a still air environment with T
=30V, V
=0V, V
=V
=5V, I
=10V, V
=10V, I
=4.5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=3
=175° C. Ratings are based on low frequency and duty cycles to keep
GS
JC
GS
I
D
and case to ambient.
=0V
D
GS
DS
DS
=20A
D
=250 A
D
GS
DS
DS
DS
=20A
GS
=20A
= ±20V
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
=20A
L
T
=0.75 ,
T
J
=125° C
J
=55° C
Min
600
200
1.2
0.4
1.6
1.5
30
90
40
18
9
4
9
11.5
11.5
Typ
750
245
1.7
7.5
0.7
0.8
2.5
11
43
70
18
11
23
5
2
5
3
3
A
=25° C.
www.aosmd.com
A
±100
Max
980
365
100
=25° C. The
14
2.2
9.5
1.4
2.4
3.5
14
30
14
13
28
5
1
1
6
Units
m
m
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A