IPB04CN10NG INFINEON [Infineon Technologies AG], IPB04CN10NG Datasheet
IPB04CN10NG
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IPB04CN10NG Summary of contents
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OptiMOS ™ 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation =f tot C 350 300 250 200 150 100 Safe operating area =f =25 ° parameter limited ...
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Typ. output characteristics =f =25 ° parameter 400 320 6 240 5.5 V 160 4 ...
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Drain-source on-state resistance =f =100 DS(on -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω =f parameter: T j(start) 1000 100 150 ° Drain-source breakdown voltage =f BR(DSS 115 110 105 ...
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PG-TO220-3: Outline Rev. 1.4 IPB04CN10N G page 8 IPI04CN10N G IPP04CN10N G 2010-01-13 ...
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Rev. 1.4 IPB04CN10N G page 9 IPI04CN10N G IPP04CN10N G 2010-01-13 ...
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PG-TO-263 (D²-Pak) Rev. 1.4 IPB04CN10N G page 10 IPI04CN10N G IPP04CN10N G 2010-01-13 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...