IPP048N06LG INFINEON [Infineon Technologies AG], IPP048N06LG Datasheet

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IPP048N06LG

Manufacturer Part Number
IPP048N06LG
Description
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP048N06LG
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.15
1)
2)
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
Current is limited by bondwire; with an R
See figure 3
Power-Transistor
IPP048N06L
P-TO220-3-1
048N06L
j
=25 °C, unless otherwise specified
thJC
=0.5 the chip is able to carry 161A
Symbol Conditions
P
T
I
I
E
dv /dt
V
D
D,pulse
j
tot
, T
AS
GS
IPB048N06L
P-TO263-3-2
048N06L
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
C
page 1
C
C
C
j,max
=100 A, R
=100 A, V
=25 °C
=25 °C
=100 °C
=25 °C
=175 °C
1)
2)
DS
GS
Product Summary
V
R
I
=48 V,
D
=25 Ω
DS
DS(on),max SMDversion
IPP048N06L G
-55 ... 175
55/175/56
Value
100
100
400
810
±20
300
6
IPB048N06L G
100
4.4
60
Unit
A
mJ
kV/µs
V
W
°C
V
A
2010-01-13

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IPP048N06LG Summary of contents

Page 1

OptiMOS ™ Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant • Halogen-free according to IEC61249-2-21 IPP048N06L Type P-TO220-3-1 ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation =f ≥ tot C GS 350 300 250 200 150 100 Safe operating area =f =25 ° parameter: t ...

Page 5

Typ. output characteristics =f =25 ° parameter 240 5V 4.5 V 5.5 V 10V 200 160 120 Typ. transfer characteristics =f |>2|I ...

Page 6

Drain-source on-state resistance =f =100 DS(on -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =25 Ω =f parameter: T j(start Drain-source breakdown voltage =f BR(DSS) j ...

Page 8

PG-TO-263 (D²-Pak) Rev. 1.15 IPP048N06L G page 8 IPB048N06L G 2010-01-13 ...

Page 9

PG-TO220-3: Outline Rev. 1.15 IPP048N06L G page 9 IPB048N06L G 2010-01-13 ...

Page 10

Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...

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