SPD30N03S2L-10_08 INFINEON [Infineon Technologies AG], SPD30N03S2L-10_08 Datasheet - Page 3

• Manufacturer Part Number: SPD30N03S2L-10_08
• Description: OptiMOS Power-Transistor Feature N-Channel Enhancement mode
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
I
V
t
Q
g
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
gs
gd
g
(plateau) V
rr
Page 3
T
V
V
di
V
I
V
f=1MHz
V
I
R
V
V
V
D
D
C
DS
GS
DD
G
DD
DD
GS
DD
GS
R
F
=30A
=30A,
=25°C
/dt=100A/µs
=-V, I
=5.4Ω
=0V, I
≥2*I
=0V, V
=0 to 10V
=15V, V
=24V, I
=24V, I
=24V, I
Conditions
D
F =
*R
F
l
DS
S
=30A
D
D
D
DS(on)max
GS
,
=30A
=30A,
=30A
=25V,
=10V,
,
min.
23.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1160
SPD30N03S2L-10 G
47.5
10.9
31.4
typ.
450
120
0.9
6.1
3.7
3.4
31
29
13
27
17
-
-
02-09-2008
max.
1550 pF
16.3
41.8
120
600
175
1.2
9.2
4.9
30
39
37
20
41
26
-
-
A
V
ns
nC
Unit
S
ns
nC
V