IPB70N04S4-06 INFINEON [Infineon Technologies AG], IPB70N04S4-06 Datasheet - Page 6

• Manufacturer Part Number: IPB70N04S4-06
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
175 °C
DS
26 µA
0.6
0.6
V
V
T
SD
SD
j
60
175 °C
[°C]
[V]
[V]
0.8
0.8
150 µA
25 °C
25 °C
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Avalanche characteristics
I
parameter: T
A S
= f(t
100
0.1
10
10
10
10
10
1
4
3
2
1
0.1
AV
DS
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
IPI70N04S4-06, IPP70N04S4-06
1
10
t
V
AV
DS
10
15
[µs]
150 °C
[V]
IPB70N04S4-06
100 °C
20
100
25 °C
25
2010-04-13
Coss
Crss
Ciss
1000
30