AOT9606 AOSMD [Alpha & Omega Semiconductors], AOT9606 Datasheet - Page 2

• Manufacturer Part Number: AOT9606
• Description: 600V, 8A N-Channel MOSFET
• Manufacturer: AOSMD [Alpha & Omega Semiconductors]

AOT8N60/AOTF8N60
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
BV
/∆T
I
I
V
R
g
V
I
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. L=60mH, I
Rev 0. July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
S
SM
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
DSS
J
θJA
is the sum of the thermal impedence from junction to case R
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
=3.2A, V
θJA
is measured with the device in a still air environment with T
DD
=50V, R
D
is based on T
Parameter
G
=25Ω, Starting T
J
J(MAX)
=25°C unless otherwise noted)
J(MAX)
=150°C.
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J
=25°C
Conditions
I
I
I
V
V
V
V
V
V
I
V
V
V
V
R
I
J(MAX)
D
D
D
S
F
F
DS
DS
DS
DS
GS
DS
GS
GS
GS
GS
G
=8A,dI/dt=100A/µs,V
=8A,dI/dt=100A/µs,V
=250µA, V
=250µA, V
=250µA, V
=1A, V
=25Ω
=600V, V
=480V, T
=0V, V
=V
=40V, I
=10V, I
=0V, V
=0V, V
=10V, V
=10V, V
=150°C.
GS
θJC
GS
, I
and case to ambient.
GS
DS
DS
D
=0V
D
D
=250µA
DS
DS
=4A
=4A
GS
GS
GS
=±30V
=25V, f=1MHz
=0V, f=1MHz
A
J
GS
=125°C
=480V, I
=300V, I
=25°C.
=0V, T
=0V, T
=0V
=0V
J
J
=25°C
=150°C
D
D
DS
DS
=8A
=8A,
=100V
=100V
Min
600
912
6.2
3.1
87
3
1140
0.65
0.74
12.5
0.73
28.4
13.4
Typ
700
109
270
3.8
7.8
3.9
5.8
3.3
30
63
69
51
±100
1370
Max
131
324
4.0
0.9
9.5
5.9
10
32
35
17
40
75
85
65
1
5
1
8
7
www.aosmd.com
Units
V/
nC
nC
nC
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
V
S
V
A
A
o
C