MTB23P06 MOTOROLA [Motorola, Inc], MTB23P06 Datasheet - Page 3

• Manufacturer Part Number: MTB23P06
• Description: TMOS POWER FET 23 AMPERES 60 VOLTS
• Manufacturer: MOTOROLA [Motorola, Inc]

Motorola TMOS Power MOSFET Transistor Device Data
1.5
0.5
0.5
0.4
0.3
0.2
0.1
32
28
24
20
16
12
2
1
0
– 50
8
4
0
0
0
0
T J = 25 C
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
V GS = 10 V
I D = 10 A
– 25
V DS , DRAIN–TO–SOURCE CHARACTERISTICS (VOLTS)
Figure 5. On–Resistance Variation with
4
Figure 1. On–Region Characteristics
9 V
0
2
10 V
T J , JUNCTION TEMPERATURE ( C)
8
25
I D , DRAIN CURRENT (AMPS)
and Temperature
12
Temperature
50
4
8 V
16
75
V GS = 5 V
100
TYPICAL ELECTRICAL CHARACTERISTICS
6
20
7 V
6 V
T J = 150 C
125
– 55 C
24
25 C
150
8
28
175
200
10
32
10000
2000
1000
4000
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.18
0.1
400
200
100
32
28
24
20
16
12
40
20
10
8
4
0
15
0
0
Figure 4. On–Resistance versus Drain Current
T J = 125 C
Figure 6. Drain–To–Source Leakage Current
V DS 10 V
T J = 25 C
100 C
25 C
20
6
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
2
25
12
I D , DRAIN CURRENT (AMPS)
30
and Gate Voltage
versus Voltage
V GS = 10 V
18
4
15 V
35
24
40
– 55 C
6
30
45
MTB23P06E
36
T J = 150 C
V GS = 0 V
50
8
25 C
42
55
3
48
10
60