MTB23P06 MOTOROLA [Motorola, Inc], MTB23P06 Datasheet - Page 6

• Manufacturer Part Number: MTB23P06
• Description: TMOS POWER FET 23 AMPERES 60 VOLTS
• Manufacturer: MOTOROLA [Motorola, Inc]

MTB23P06E
6
100
70
50
30
10
7
5
3
1
1
0.05
0.03
0.02
0.01
0.5
0.3
0.2
0.1
Figure 11. Maximum Rated Forward Biased
1
Figure 14. Diode Reverse Recovery Waveform
0.01
I S
2
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.02
V GS = 20 V
SINGLE PULSE
T C = 25 C
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
t p
Safe Operating Area
4
D = 0.5
0.05
SINGLE PULSE
0.05
0.02
6 8
0.2
0.1
dc
0.01
di/dt
t a
10
0.1
t rr
10 ms
t b
I S
0.2
20
0.25 I S
1 ms
40
0.5
SAFE OPERATING AREA
60
Figure 13. Thermal Response
100 s
10 s
80 100
TIME
1
2
t,TIME (ms)
1600
1400
1200
1000
Motorola TMOS Power MOSFET Transistor Device Data
800
600
400
200
2.5
2.0
1.5
0.5
P (pk)
3
1
0
0
5
25
25
DUTY CYCLE, D = t 1 /t 2
Figure 12. Maximum Avalanche Energy versus
Figure 15. D 2 PAK Power Derating Curve
10
t 1
t 2
50
T J , STARTING JUNCTION TEMPERATURE ( C)
50
Starting Junction Temperature
R JA = 50 C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
20
T A , AMBIENT TEMPERATURE ( C)
75
75
50
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
100
100
450 mils x 350 mils
100
125
200
I D = 23 A
125
150
500
1000
175
150