FQD17N08 FAIRCHILD [Fairchild Semiconductor], FQD17N08 Datasheet
FQD17N08
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FQD17N08 Summary of contents
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... A = 25°C) C Parameter January 2001 QFET QFET QFET QFET = 0.115 @ DS(on " " ! " ! " " " " " FQD17N08 / FQU17N08 Units 80 V 12.9 A 8 100 mJ 12.9 A 4.0 mJ 6.5 V/ns 2 0.32 W/°C -55 to +150 °C 300 °C Typ Max Units -- 3 ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...
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Typical Characteristics V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6 5.0 V Bottom : 4 Drain-Source Voltage [V] DS Figure 1. ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs. Temperature Operation in This Area is Limited DS(on ...
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3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & ...
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Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...
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Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 ...
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Package Dimensions (Continued) 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A1, January 2001 ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT ...