FQD17N08 FAIRCHILD [Fairchild Semiconductor], FQD17N08 Datasheet - Page 3

• Manufacturer Part Number: FQD17N08
• Description: 80V N-Channel MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2000 Fairchild Semiconductor International
Typical Characteristics
900
750
600
450
300
150
10
10
0.4
0.3
0.2
0.1
0.0
0
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
, Drain Current [A]
0
10
20
0
V
V
GS
GS
C
C
C
= 10V
= 20V
rss
iss
oss
30
C
C
C
iss
oss
rss
※ Note :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
40
10
gd
gd
1
(C
※ Notes :
J
ds
1. V
2. f = 1 MHz
= 25℃
= shorted)
GS
= 0 V
50
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
150℃
Variation vs. Source Current
0.4
2
150℃
4
V
V
GS
SD
Q
and Temperature
-55℃
G
0.6
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
4
, Total Gate Charge [nC]
25℃
V
0.8
6
6
DS
V
DS
= 64V
= 40V
1.0
8
※ Notes :
※ Note :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 30V
= 0V
1.2
10
D
= 16.5A
Rev. A1, January 2001
1.4
10
12