bc807ds NXP Semiconductors, bc807ds Datasheet - Page 2

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bc807ds

Manufacturer Part Number
bc807ds
Description
Pnp General Purpose Double Transistor
Manufacturer
NXP Semiconductors
Datasheet

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BC807DS
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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP transistor pair in a SOT457 (SC-74) plastic package.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2002 Nov 22
BC807DS
Per transistor unless otherwise specified
V
V
V
I
I
I
P
T
T
T
Per device
P
SYMBOL
C
CM
BM
stg
j
amb
High current (500 mA)
600 mW total power dissipation
Replaces two SOT23 packaged transistors on same
PCB area.
General purpose switching and amplification
Push-pull amplifiers
Multi-phase stepper motor drivers.
CBO
CEO
EBO
tot
tot
PNP general purpose double transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
PARAMETER
MARKING CODE
N2
open emitter
open base
open collector
T
T
amb
amb
2
25 C; note 1
25 C; note 1
QUICK REFERENCE DATA
PINNING
V
I
I
SYMBOL
C
CM
CEO
Fig.1
CONDITIONS
PIN
1, 4
2, 5
6, 3
Top view
Simplified outline (SOT457) and symbol.
6
1
collector-emitter voltage
collector current (DC)
peak collector current
emitter
base
collector
5
2
PARAMETER
4
3
DESCRIPTION
MAM457
TR1; TR2
TR1; TR2
TR1; TR2
MIN.
65
65
Product specification
TR1
6
1
BC807DS
370
+150
150
+150
600
MAX.
MAX.
45
500
1
50
45
5
500
1
200
5
2
2
4
3
TR2
.
V
mA
A
V
V
V
mA
A
mA
mW
mW
UNIT
UNIT
C
C
C

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