bc807ds NXP Semiconductors, bc807ds Datasheet - Page 4

• Manufacturer Part Number: bc807ds
• Description: Pnp General Purpose Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2002 Nov 22
handbook, halfpage
handbook, halfpage
PNP general purpose double transistor
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
B
600
500
400
300
200
100
10
10
= 1 V.
= 10.
10
amb
amb
amb
amb
amb
amb
0
1
3
2
10
10
= 150 C.
= 25 C.
= 55 C.
= 150 C.
= 25 C.
= 55 C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
I C (mA)
I C (mA)
MHC324
MHC326
10
10
3
3
4
handbook, halfpage
handbook, halfpage
(1) I
(2) I
(3) I
(4) I
Fig.3
V
(1) T
(2) T
(3) T
Fig.5
(mA)
(mV)
V BE
CE
I C
1000
1200
1000
800
600
400
200
800
600
400
200
= 1 V.
B
B
B
B
amb
amb
amb
0
= 7 mA.
= 6.3 mA.
= 5.6 mA.
= 4.9 mA.
10
0
= 55 C.
= 25 C.
= 150 C.
Collector current as a function of
collector-emitter voltage; typical values.
Base-emitter voltage as a function of
collector current; typical values.
1
2
1
(5) I
(6) I
(7) I
(8) I
(1)
(2)
(3)
(1)
(2)
(3)
B
B
B
B
4
= 4.2 mA.
= 3.5 mA.
= 2.8 mA.
= 2.1 mA.
10
6
(10)
(4)
(5)
(6)
(7)
(8)
(9)
Product specification
(9) I
(10) I
10
BC807DS
2
8
B
B
I C (mA)
V CE (V)
= 1.4 mA.
= 0.7 mA.
MHC325
MHC327
10
10
3