bc859b NXP Semiconductors, bc859b Datasheet - Page 4

• Manufacturer Part Number: bc859b
• Description: Bc859; Bc860 Pnp General Purpose Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. V
2. V
2004 Jan 16
I
I
h
V
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BE
= 25 C unless otherwise specified.
c
e
PNP general purpose transistors
BEsat
BE
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
noise figure
BC859B; BC860B
BC859C; BC860C
BC859B; BC860B;
BC859C; BC860C
BC859B; BC860B;
BC859C; BC860C
PARAMETER
I
I
I
I
see Figs 2 and 3
I
I
I
I
I
I
I
I
I
I
f = 30 Hz to 15 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
C
C
= 0; V
= 0; V
= 0; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= I
= I
= 10 mA; V
= 200 A; V
= 200 A; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CB
EB
CE
CE
B
B
CE
CE
B
B
= 500 mV; f = 1 MHz
= 10 V; f = 1 MHz
CE
CE
= 0.5 mA
= 0.5 mA; note 1
= 5 V;
= 5 V; note 2
= 5 mA
= 5 mA; note 1
= 5 V; note 2
= 5 V; f = 100 MHz 100
= 5 V; R
= 5 V; R
j
= 150 C
S
S
= 2 k ;
= 2 k ;
220
420
MIN.
600
BC859; BC860
4.5
10
TYP.
1
75
250
700
850
650
Product specification
475
800
4
4
MAX. UNIT
15
4
100
300
650
750
820
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
A