bf512 NXP Semiconductors, bf512 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
bf512
Manufacturer Part Number
bf512
Description
N-channel Silicon Field-effect Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BF512.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm
STATIC CHARACTERISTICS
T
December 1997
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
amb
N-channel silicon field-effect transistors
I
V
I
S
D
V
DS
= 25 C
= 0; I
= 10 A; V
GS
= 10 V; V
= 0.2 V; V
D
= 10 A
DS
GS
DS
= 10 V
= 0
= 0
amb
= 40 C (note 1)
I
DSS
I
V
V
GSS
(BR)GDO
(P)GS
10 mm
0.7 mm.
<
typ.
3
BF510
0.7
3.0
0.8
10
20
511
R
V
V
I
P
T
T
D
2.5
7.0
1.5
stg
j
DS
DGO
tot
th j-a
10
20
I
G
512
2.2
10
20
12
max.
max.
max.
max.
max.
max.
=
6
65 to
BF510 to 513
Product specification
513
250 mW
150
150
430 K/W
20 V
20 V
30 mA
10 mA
10 nA
20 V
10
18
3 V
mA
mA
C
C