bfg540w-xr NXP Semiconductors, bfg540w-xr Datasheet - Page 2

• Manufacturer Part Number: bfg540w-xr
• Description: Npn 9 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
QUICK REFERENCE DATA
2000 May 23
SYMBOL
V
V
I
P
h
C
f
G
|s
F
C
T
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
CBO
CES
tot
re
NPN 9 GHz wideband transistor
UM
21
|
2
collector-base voltage
collector-emitter voltage R
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
open emitter
T
I
I
I
I
I
I
C
C
C
C
C
C
s
s
BE
= 40 mA; V
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
MARKING
PINNING
BFG540W
BFG540W/X
BFG540W/XR
BFG540W (see Fig.1)
BFG540W/X (see Fig.1)
BFG540W/XR (see Fig.2)
TYPE NUMBER
= 0
85 C
PIN
opt
1
2
3
4
1
2
3
4
1
2
3
4
; I
CB
C
= 8 V; f = 1 MHz
= 10 mA; V
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
CE
CE
CE
CE
CE
= 8 V
= 8 V; f = 1 GHz; T
= 8 V; f = 900 MHz; T
= 8 V; f = 2 GHz; T
= 8 V; f = 900 MHz; T
CONDITIONS
DESCRIPTION
2
CE
= 8 V; f = 2 GHz
CODE
N9
N7
N8
BFG540W/X; BFG540W/XR
amb
amb
amb
amb
= 25 C
= 25 C
= 25 C
= 25 C
fpage
alfpage
100
14
MIN. TYP. MAX. UNIT
Fig.1 SOT343N.
Fig.2 SOT343R.
3
2
Top view
4
1
Top view
Product specification
120
0.5
9
16
10
15
2.1
BFG540W
MSB842
20
15
120
500
250
4
1
3
2
MBK523
V
V
mA
mW
pF
GHz
dB
dB
dB
dB