bfg520xr NXP Semiconductors, bfg520xr Datasheet

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bfg520xr

Manufacturer Part Number
bfg520xr
Description
Bfg520; Bfg520/x; Bfg520/xr Npn 9 Ghz Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Rev. 04 — 23 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for bfg520xr

bfg520xr Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc ...

Page 3

... NXP Semiconductors NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I DC collector current C P total power dissipation tot T storage temperature stg T junction temperature j THERMAL RESISTANCE ...

Page 4

... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency T G maximum unilateral UM power gain (note insertion power gain ...

Page 5

... NXP Semiconductors NPN 9 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.3 Power derating curve. 0.6 handbook, halfpage C re (pF) 0.4 0 MHz. C Fig.5 Feedback capacitance as a function of collector-base voltage. BFG520; BFG520/X; BFG520/XR MRA670-1 handbook, halfpage h FE ...

Page 6

... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G max gain. 25 handbook, halfpage gain (dB) MSG 900 MHz amb Fig.7 Gain as a function of collector current. 50 handbook, halfpage ...

Page 7

... NXP Semiconductors NPN 9 GHz wideband transistor 20 handbook, halfpage d im (dB Fig.11 Intermodulation distortion as a function of collector current. 5 handbook, halfpage F min (dB ass 3 2000 MHz 2 F min 1000 MHz 1 900 MHz 500 MHz amb Fig ...

Page 8

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth pot. unst. region 180 mA 900 MHz handbook, full pagewidth G max = 13 dB 180 mA GHz BFG520; BFG520/X; BFG520/XR stability 90 circle 1 135 0.5 F min = ...

Page 9

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 mA Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180 mA Fig.18 Common emitter forward transmission coefficient ( 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 135 1 90 ...

Page 10

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 0. mA Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180 mA Fig.20 Common emitter output reflection coefficient (S BFG520; BFG520/X; BFG520/XR 90 135 3 GHz 40 MHz ...

Page 11

... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B BFG520; BFG520/X; BFG520/ scale ...

Page 12

... NXP Semiconductors NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R BFG520; BFG520/X; BFG520/ scale ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NPN 9 GHz wideband transistor Supersedes BFG520XR_CNV_3 BFG520XR_2 BFG520XR_1 - All rights reserved. Date of release: 23 November 2007 Document identifier: BFG520XR_N_4 ...

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