NTB52N10T4 ONSEMI [ON Semiconductor], NTB52N10T4 Datasheet - Page 3

• Manufacturer Part Number: NTB52N10T4
• Description: N-Channel Enhancement−Mode D2PAK
• Manufacturer: ONSEMI [ON Semiconductor]

0.05
0.04
0.03
0.02
0.01
2.25
1.75
1.25
0.75
0.25
100
2.5
2.0
1.5
1.0
0.5
90
80
70
60
40
30
20
10
50
0
0
0
−60
0
10
V
8 V
Figure 3. On−Resistance versus Drain Current
GS
9 V
V
V
20
1
I
V
GS
Figure 5. On−Resistance Variation with
−30
D
= 10 V
DS
GS
= 26 A
Figure 1. On−Region Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
= 10 V
T
2
30
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
0
3
7 V
40
and Temperature
Temperature
4
30
T
T
T
50
J
J
J
= 100°C
= −55°C
= 25°C
5
60
60
T
6
J
= 25°C
70
7
90
80
8
120
90
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5.5 V
4.5 V
9
6 V
5 V
4 V
NTB52N10
100
150
10
3
10,000
0.05
0.04
0.03
0.02
0.01
1000
100
100
90
80
70
60
50
40
30
20
10
10
0
0
0
2
30
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
T
V
10
GS
J
V
DS
V
= 25°C
GS
DS
40
= 0 V
Figure 2. Transfer Characteristics
≥ 10 V
3
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
I
D
, DRAIN CURRENT (AMPS)
50
T
30
J
and Gate Voltage
= 100°C
4
versus Voltage
40
T
T
60
J
J
V
= 100°C
= 150°C
50
GS
5
T
= 10 V
V
J
70
GS
60
= −55°C
= 15 V
T
6
J
70
= 25°C
80
80
7
90
90
100
100
8