NTB60N06T4 ONSEMI [ON Semiconductor], NTB60N06T4 Datasheet - Page 3

• Manufacturer Part Number: NTB60N06T4
• Description: 60 V, 60 A, N-Channel TO-220 and D2PAK
• Manufacturer: ONSEMI [ON Semiconductor]

0.026
0.022
0.018
0.014
0.006
120
100
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.01
80
60
40
20
−50
0
2
1
0
Figure 3. On−Resistance versus Gate−to−Source
0
8 V
9 V
V
I
V
D
−25
GS
GS
V
V
= 30 A
Figure 5. On−Resistance Variation with
DS
DS
= 10 V
= 10 V
Figure 1. On−Region Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
= 10 V
T
1
J
0
, JUNCTION TEMPERATURE ( C)
I
D
, DRAIN CURRENT (AMPS)
25
40
Temperature
T
T
2
T
J
J
J
50
= 100 C
= −55 C
Voltage
= 25 C
7 V
60
75
3
100
80
125
NTP60N06, NTB60N06
4
5.5 V
4.5 V
6 V
5 V
100
150
http://onsemi.com
175
120
5
3
10,000
0.026
0.022
0.018
0.014
0.006
1000
0.01
120
100
100
80
60
40
20
10
0
0
0
0
3
Figure 4. On−Resistance versus Drain Current
V
T
V
Figure 6. Drain−to−Source Leakage Current
DS
J
V
GS
= 100 C
V
GS
V
T
GS
DS
= 0 V
J
20
Figure 2. Transfer Characteristics
= 15 V
10 V
10
= 25 C
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
I
D
, DRAIN CURRENT (AMPS)
40
and Gate Voltage
20
versus Voltage
T
J
5
T
= −55 C
T
T
T
T
J
J
J
T
J
J
= −55 C
J
= 100 C
= 25 C
= 150 C
= 125 C
60
30
= 100 C
6
80
40
7
100
50
120
60
8