NTB75N03L09 ONSEMI [ON Semiconductor], NTB75N03L09 Datasheet - Page 5

• Manufacturer Part Number: NTB75N03L09
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

12000
10000
8000
6000
4000
2000
1000
100
10
0
10
1
Figure 9. Resistive Switching Time Variation
t
t
8
d(off)
d(on)
t
t
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
r
f
6
2.2
4 2 0 2 4 6 8 10 12 14 16 18 20 22
Figure 7. Capacitance Variation
V
GS
R
G
vs. Gate Resistance
V
, GATE RESISTANCE (W)
4.7
VOLTAGE (VOLTS)
DS
T
I
D
J
1600
1400
1200
1000
C
C
C
= 75 A
= 25 C
800
600
400
200
6.2
iss
oss
rss
0
25
Figure 11. Maximum Avalanche Energy vs.
T
9.1
J
, STARTING JUNCTION TEMPERATURE ( C)
NTP75N03L09, NTB75N03L09
50
V
V
Starting Junction Temperature
V
V
T
DD
GS
J
DS
GS
= 25 C
10
= 15 V
= 5 V
= 0 V
= 0 V
http://onsemi.com
75
25
20
5
10
100
8
6
4
2
0
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
0.0
Figure 10. Diode Forward Voltage vs. Current
Drain−to−Source Voltage vs. Total Charge
I
Q
D
V
1
= 75 A
V
T
SD
125
10
J
GS
= 25 C
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
0.2
= 0 V
Q
Q
g
3
, TOTAL GATE CHARGE (nC)
V
20
150
DS
0.4
Q
Q
2
30
T
0.6
40
I
T
D
J
V
= 75 A
0.8
= 25 C
GS
50
60
1.0
30
20
10
0