k9k8g08u0a-y Samsung Semiconductor, Inc., k9k8g08u0a-y Datasheet - Page 25

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k9k8g08u0a-y

Manufacturer Part Number
k9k8g08u0a-y
Description
1g X 8 Bit / 2g X 8 Bit / 4g X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of µ-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
Figure 5. Read Operation with CE don’t-care.
CLE
ALE
K9WAG08U1A
K9K8G08U0A K9NBG08U5A
CE
WE
I/Ox
CLE
ALE
R/B
CE
WE
RE
I/Ox
CE
WE
00h
80h
Address(5Cycles)
t
CS
Address(5Cycle)
t
WP
t
CH
30h
Data Input
t
R
25
I/O
CE
RE
0
~
7
CE don’t-care
t
CEA
Data Output(serial access)
t
REA
CE don’t-care
FLASH MEMORY
Data Input
out
10h

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