k9k8g08u0a-y Samsung Semiconductor, Inc., k9k8g08u0a-y Datasheet - Page 41

• Manufacturer Part Number: k9k8g08u0a-y
• Description: 1g X 8 Bit / 2g X 8 Bit / 4g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Figure 8. Program & Read Status Operation
Figure 7. Random Data Output In a Page
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive
bytes up to 2,112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for a single page. The addressing should be done in sequential
order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into
the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
Modifying the data of a sector by Random Data Input before Copy-Back Program must be performed for the whole sector
and is allowed only once per each sector. Any partial modification smaller than a sector corrupts the on-chip EDC codes.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-
ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-
gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
R/B
RE
I/Ox
R/B
K9WAG08U1A
K9K8G08U0A K9NBG08U5A
I/Ox
00h
Col. Add.1,2 & Row Add.1,2,3
80h
5Cycles
Address
Col. Add.1,2 & Row Add.1,2,3
Address & Data Input
Data
30h
t
R
Data Field
10h
Data Output
Spare Field
41
t
PROG
05h
Col. Add.1,2
Address
2Cycles
70h
FLASH MEMORY
E0h
Data Field
I/O
Fail
Data Output
0
"1"
"0"
Spare Field
Pass