PHMB1200B12_1 NIEC [Nihon Inter Electronics Corporation], PHMB1200B12_1 Datasheet - Page 3

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PHMB1200B12_1

Manufacturer Part Number
PHMB1200B12_1
Description
1200A 1200V
Manufacturer
NIEC [Nihon Inter Electronics Corporation]
Datasheet
PHMB1200B12
2000
1000
0.05
500
200
100
0.5
0.2
0.1
10
5
2
1
0.1
0
I
T
V
I
V
T
F
C
Fig.7- Series Gate Impedance vs. Switching Time
C
C
=1200A
CC
GE
=1200A
=25℃
=25℃
=600V
=±15V
Fig.9- Reverse Recovery Characteristics
I
0.2
trr
RrM
1200
Series Gate Impedance R
0.5
2400
2x10
1x10
5x10
2x10
1x10
5x10
2x10
1x10
5x10
2x10
1x10
-di/dt
1
-1
-1
-2
-2
-2
-3
-3
-3
-4
-4
-4
10
3600
-5
(A/μs)
2
4800
G
10
(Ω)
-4
5
6000
(Typical)
10
Fig.11- Transient Thermal Impedance
(Typical)
日本インター株式会社
toff
ton
tr
tf
10
-3
7200
20
Time t
10
-2
(s)
2400
2000
1600
1200
5000
2000
1000
800
400
500
200
100
0.5
0.2
50
20
10
0
5
2
1
0
0
10
Fig.8- Forward Characteristics of Free Wheeling Diode
-1
Fig.10- Reverse Bias Safe Operating Area
Collector to Emitter Voltage V
T
1 Shot Pulse
C
400
=25℃
1
1
Forward Voltage V
IGBT
FRD
T
C
800
=25℃
2
10
1
F
(V)
T
C
CE
=125℃
1200
3
(V)
R
V
T
(Typical)
C
G
GE
≦125℃
=0.33Ω
=±15V
1600
4

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