PHMB200B12_1 NIEC [Nihon Inter Electronics Corporation], PHMB200B12_1 Datasheet - Page 2

• Manufacturer Part Number: PHMB200B12_1
• Description: 200A 1200V
• Manufacturer: NIEC [Nihon Inter Electronics Corporation]

ＰＨＭＢ２００Ｂ１２
100000
50000
20000
10000
5000
2000
1000
400
300
200
100
500
200
100
16
14
12
10
0
8
6
4
2
0
0.1
0
0
Fig.5- Capacitance vs. Collector to Emitter Voltage
0.2
V
GE
15V
=20V
Fig.3- Collector to Emitter On Voltage
Fig.1- Output Characteristics
2
0.5
4
Collector to Emitter Voltage V
Collector to Emitter Voltage V
Gate to Emitter Voltage V
vs. Gate to Emitter Voltage
I
C
=100A
200A
1
12V
2
4
8
5
400A
12
10
6
GE
(Typical)
20
CE
CE
(V)
(Typical)
(V)
(V)
16
8
50
T
(Typical)
日本インター株式会社
C
V
f=1MH
T
T
100
=125℃
C
GE
C
=25℃
=25℃
10V
=0V
Cies
Coes
Cres
7V
8V
9V
Z
200
10
20
800
700
600
500
400
300
200
100
1.4
1.2
0.8
0.6
0.4
0.2
16
14
12
10
0
8
6
4
2
0
1
0
0
0
0
Fig.4- Gate Charge vs. Collector to Emitter Voltage
R
T
t
t
L
C
OFF
ON
t
t
=3Ω
=25℃
r
Fig.6- Collector Current vs. Switching Time
f
Fig.2- Collector to Emitter On Voltage
300
4
Gate to Emitter Voltage V
50
vs. Gate to Emitter Voltage
Total Gate Charge Qg
I
C
200A
Collector Current I
=100A
600
8
100
V
CE
400A
=600V
900
400V
12
200V
C
(A)
GE
(nC)
QS043-401M0052 (3/4)
(Typical)
(V)
150
1200
16
(Typical)
V
R
V
T
C
CC
G
GE
=25℃
= 2.0 Ω
=600V
=±15V
T
(Typical)
C
=25℃
1500
200
20
16
14
12
10
8
6
4
2
0