pbss4350x NXP Semiconductors, pbss4350x Datasheet

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pbss4350x

Manufacturer Part Number
pbss4350x
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet

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PBSS4350X
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pbss4350xЈ¬135
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Product specification
Supersedes data of 2003 Nov 21
book, halfpage
DATA SHEET
PBSS4350X
50 V, 3 A
NPN low V
DISCRETE SEMICONDUCTORS
CEsat
M3D109
(BISS) transistor
2004 Nov 04

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pbss4350x Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBSS4350X NPN low V Product specification Supersedes data of 2003 Nov 21 M3D109 (BISS) transistor CEsat 2004 Nov 04 ...

Page 2

... V CEO and CEsat PINNING PIN MARKING CODE 2 Product specification PBSS4350X PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION emitter collector base Fig.1 Simplified outline (SOT89) and symbol. MAX. UNIT ...

Page 3

... CONDITIONS open emitter open base open collector note 4 limited by T j(max amb note 1 note 2 note 3 note single-sided copper, tin-plated. 3 Product specification PBSS4350X VERSION SOT89 MIN. MAX. UNIT 0.5 A 550 mW ...

Page 4

... Ceramic PCB (3) FR4 PCB mounting pad for collector. 2 (2) FR4 PCB copper (4) Standard footprint. mounting pad for collector. Fig.2 Power derating curves. 2004 Nov 04 MLE186 120 160 T amb ( C) 2 copper mounting pad for collector. 4 Product specification PBSS4350X ...

Page 5

... Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 in free air 2 , single-sided copper, tin-plated (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02. 5 Product specification PBSS4350X CONDITIONS VALUE note 1 225 note 2 125 note 3 90 note (9) = 0.01. (10 UNIT K/W ...

Page 6

... Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02 (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02. 6 Product specification PBSS4350X (9) = 0.01. (10 (9) = 0.01. (10 006aaa244 (s) p 006aaa245 (s) p ...

Page 7

... 100 mA 100 MHz 100 MHz Product specification PBSS4350X MIN. TYP. MAX. UNIT 100 100 nA 100 nA 300 300 300 700 200 100 80 mV 160 ...

Page 8

... T (2) T (3) T Fig.7 MLE183 handbook, halfpage V CEsat (1) ( (mA) T amb (1) I (2) I (3) I Fig.9 8 Product specification PBSS4350X 1 (V) ( (2) ( amb = 25 C. amb = 100 C. amb Base-emitter voltage as a function of collector current ...

Page 9

... V CE (V) T amb ( 520 A. ( (10 260 A. ( (3) I (4) I Fig.13 Collector current as a function of 9 Product specification PBSS4350X ( 20 150 C. ( amb amb collector current ...

Page 10

... OUTLINE VERSION IEC SOT89 2004 Nov scale 0.44 4.6 2.6 4.25 3.0 1.5 0.23 4.4 2.4 3.75 REFERENCES JEDEC JEITA TO-243 SC-62 10 Product specification PBSS4350X 1.2 0.13 0.8 EUROPEAN ISSUE DATE PROJECTION 99-09-13 04-08-03 SOT89 ...

Page 11

... Product specification PBSS4350X DEFINITION These products are not Philips Semiconductors ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited ...

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