pbss2515ypn NXP Semiconductors, pbss2515ypn Datasheet - Page 3

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pbss2515ypn

Manufacturer Part Number
pbss2515ypn
Description
15 V Low Vce Sat Npn/pnp Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005 Jan 11
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
th(j-a)
15 V low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to ambient
CE(sat)
PARAMETER
NPN/PNP transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
3
25 C
25 C; note 1
note 1
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
416
PBSS2515YPN
15
15
6
500
1
100
200
+150
150
+150
300
Product specification
MAX.
UNIT
K/W
V
V
V
mA
A
mA
mW
mW
C
C
C
UNIT

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