pmbfj177 NXP Semiconductors, pmbfj177 Datasheet - Page 3

• Manufacturer Part Number: pmbfj177
• Description: P-channel Silicon Field-effect Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
Note
1. Mounted on a ceramic substrate of 8 mm
April 1995
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (d.c.)
Total power dissipation
Storage temperature range
Junction temperature
From junction to ambient in free air
Gate cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source ON-resistance
j
= 25 C unless otherwise specified
P-channel silicon field-effect transistors
up to T
V
I
G
V
V
I
V
GS
D
= 1 A; V
DS
DS
DS
= 10 nA; V
= 20 V; V
= 15 V; V
= 15 V; V
= 0,1 V; V
amb
= 25 C
DS
DS
DS
= 0
GS
GS
GS
= 0
= 15 V
= 0
(1)
= 0
= 10 V
10 mm
0,7 mm.
3
R
I
V
V
R
V
V
P
T
T
GSS
I
I
I
th j-a
stg
j
(BR)GSS
GS off
GSO
GDO
tot
DS on
DSX
DSS
V
G
DS
max.
max.
max.
max.
max.
max.
=
PMBFJ174
135
20
30
10
85
1
1
5
PMBFJ174 to 177
65 to
175
125
70
30
430
300
150
30
30
30
50
1
1
7
3
6
Product specification
150
176
250
35
30
1
1
2
1
4
177
2,25
300
1,5
0,8
20
30 V
1 nA
1 nA
K/W
V
V
V
mA
mW
C
C
mA
mA
V
V