ra45h4452m Quanzhou Jinmei Electronic Co.,Ltd., ra45h4452m Datasheet

ra45h4452m

Manufacturer Part Number

ra45h4452m

Description

Mitsubishi Rf Mosfet Module

Manufacturer

Quanzhou Jinmei Electronic Co.,Ltd.

Datasheet

1.RA45H4452M.pdf (8 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RA45H4452M

Manufacturer:

CET

Quantity:

10 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

RA45H4452M

Manufacturer:

MITSUBISHI/三菱

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20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ra45h4452m-101

Manufacturer:

Mitsubishi

Quantity:

1 400

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Download datasheet (241Kb)

DESCRIPTION

Module for 12.5-volt mobile radios that operate in the 440- to

520-MHz range.

enhancement-mode MOSFET transistors. Without the gate

voltage (V

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

• P

• Broadband Frequency Range: 440-520MHz

• Low-Power Control Current I

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

RoHS COMPLIANCE

• RA45H4452M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

ORDERING INFORMATION:

RA45H4452M

current with the gate voltage and controlling the output power

with the input power

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

2.Lead in electronic Ceramic parts.

out

=5V, the typical gate current is 1 mA.

The RA45H4452M is a 45-watt RF MOSFET Amplifier

The battery can be connected directly to the drain of the

fluorescent tubes.

≅0 @ V

>45W, η

RA45H4452M-101

ORDER NUMBER

=0V), only a small leakage current flows into the

>35% @ V

=12.5V, V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

=0V)

=12.5V, V

RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO

=1mA (typ) at V

SUPPLY FORM

10 modules/tray

=5V, P

Antistatic tray,

MITSUBISHI ELECTRIC

=50mW

=5V

1/8

RA45H4452M

BLOCK DIAGRAM

MITSUBISHI RF MOSFET MODULE

RF Input (P

Gate Voltage (V

Drain Voltage (V

RF Output (P

RF Ground (Case)

PACKAGE CODE: H2S

)

out

)

), Power Control

), Battery

24 Jan 2006

Related parts for ra45h4452m

ra45h4452m Summary of contents

Page 1

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors ...

Page 2

... P =25-70mW <55W (V control), Load VSWR=3:1 out GG V =15.2V, P =50mW, P =45W ( out GG Load VSWR=20:1 MITSUBISHI ELECTRIC 2/8 MITSUBISHI RF POWER MODULE RA45H4452M RATING 17 6 100 55 -30 to +110 -40 to +110 MIN TYP MAX 440 520 45 35 -25 3 parasitic oscillation control), No degradation or destroy UNIT ...

Page 3

... (V) MITSUBISHI ELECTRIC 3/8 MITSUBISHI RF POWER MODULE RA45H4452M RoHS COMPLIANCE HARMONICS versus FREQUENCY V =12. = =50mW 450 470 490 510 530 FREQUENCY f(MHz out ...

Page 4

... P out 5.5 2.5 (V) MITSUBISHI ELECTRIC 4/8 MITSUBISHI RF POWER MODULE RA45H4452M RoHS COMPLIANCE versus DRAIN VOLTAGE 20 18 =5V out =50mW DRAIN VOLTAGE V (V) ...

Page 5

... OUTLINE DRAWING (mm) 3.0 ±0.3 7.25 ±0 12.0 ±1 16.5 ±1 43.5 ±1 RA45H4452M RoHS COMPLIANCE 66.0 ±0.5 60.0 ±0.5 51.5 ±0 Ø0.45 ±0.15 55.5 ±1 (50.4) MITSUBISHI ELECTRIC 5/8 MITSUBISHI RF POWER MODULE RA45H4452M 2-R2 ±0 Input ( Gate Voltage ( Drain Voltage ( Output (P ) out 5 RF Ground (Case) 24 Jan 2006 ) ) ...

Page 6

... Power DUT Meter =50Ω G Directional Coupler Power DC Power Supply V Supply V GG MITSUBISHI ELECTRIC 6/8 MITSUBISHI RF POWER MODULE RA45H4452M Spectrum 5 Analyzer =50Ω L Directional Attenuator Coupler + - Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case ...

Page 7

... R I =35% th(ch-case (°C/W) (A) 23.0 0.24 2.4 2.80 1.2 6. case = T =45W, the required thermal resistance R out MITSUBISHI ELECTRIC 7/8 MITSUBISHI RF POWER MODULE RA45H4452M RoHS COMPLIANCE V DD (V) 12 are out in th(ch-case) + 24.2 °C case + 60.0 °C case + 62.4 °C case ) below 90°C. For an ambient case = ( T ...

Page 8

... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA45H4452M RoHS COMPLIANCE =5V (maximum), the nominal output power becomes available. GG Keep safety first in your circuit designs! MITSUBISHI ELECTRIC 8/8 MITSUBISHI RF POWER MODULE RA45H4452M 24 Jan 2006 ...

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