ra45h4452m Quanzhou Jinmei Electronic Co.,Ltd., ra45h4452m Datasheet - Page 4

• Manufacturer Part Number: ra45h4452m
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

TYPICAL PERFORMANCE
RA45H4452M
100
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
0
2.5
2.5
2
f=440MHz,
V
P
f=490MHz,
V
P
f=490MHz,
V
P
DD
in
DD
in
GG
in
=50mW
=50mW
=50mW
=12.5V,
=12.5V,
4
3
3
=5V,
GATE VOLTAGE V
GATE VOLTAGE V
DRAIN VOLTAGE V
versus DRAIN VOLTAGE
versus GATE VOLTAGE
versus GATE VOLTAGE
6
3.5
3.5
8
4
4
ELECTROSTATIC SENSITIVE DEVICE
10
(T
OBSERVE HANDLING PRECAUTIONS
case
4.5
4.5
GG
GG
DD
12
(V)
(V)
=+25°C, Z
(V)
P
P
P
out
out
I
out
DD
5
5
14
I
DD
I
DD
5.5
5.5
16
G
MITSUBISHI ELECTRIC
=Z
20
18
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
L
=50Ω, unless otherwise specified)
4/8
100
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
80
70
60
50
40
30
20
10
OUTPUT POWER and DRAIN CURRENT
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
2.5
2.5
2
f=520MHz,
V
P
f=470MHz,
V
P
f=520MHz,
V
P
GG
in
DD
in
DD
in
RoHS COMPLIANCE
=50mW
=50mW
=50mW
4
=5V,
=12.5V,
=12.5V,
3
3
DRAIN VOLTAGE V
versus DRAIN VOLTAGE
versus GATE VOLTAGE
versus GATE VOLTAGE
GATE VOLTAGE V
GATE VOLTAGE V
6
3.5
3.5
8
4
4
10
4.5
4.5
GG
GG
DD
12
MITSUBISHI RF POWER MODULE
(V)
(V)
(V)
P
P
out
out
RA45H4452M
P
out
14
5
5
I
DD
I
I
DD
DD
16
5.5
5.5
20
18
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
24 Jan 2006