rd02mus1b Mitsumi Electronics, Corp., rd02mus1b Datasheet
rd02mus1b
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rd02mus1b Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure. FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7 ...
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... Gate threshold Voltage th Pout1 Output power Drain efficiency D1 Pout2 Output power Drain efficiency D2 Load VSWR tolerance Load VSWR tolerance Note: Above parameters, ratings, limits and conditions are subject to change. RD02MUS1B MITSUBISHI RF POWER MOS FET RD02MUS1B CONDITIONS RATINGS UNIT Vgs= Vds=0V +/-20 V Tc=25 21.9 W °C Zg=Zl=50 ...
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... Vds-Ids CHARACTERISTICS 5.0 4.5 Ta=+25°C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Vds(V) Vds VS. Coss CHARACTERISTICS 40 Ta=+25°C f=1MHz Vds(V) RD02MUS1B MITSUBISHI RF POWER MOS FET RD02MUS1B Vgs-Ids CHARACTERISTICS 3.0 Ta=+25°C Vds=7.2V 2.5 2.0 1.5 1.0 0.5 0 160 200 Vds VS. Ciss CHARACTERISTICS 40 Vgs=10V Ta=+25°C Vgs=9V Vgs=8V f=1MHz 30 Vgs=7V Vgs=6V 20 Vgs=5V 10 Vgs=4V Vgs= ...
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... Pin(dBm) Vdd-Po CHARACTERISTICS @f=175MHz 7 Ta=25°C f=175MHz 6 Pin=50mW Idq=200mA 5 Zg=ZI=50 ohm Vdd(V) RD02MUS1B MITSUBISHI RF POWER MOS FET RD02MUS1B Pin-Po CHARACTERISTICS 4.0 100 3 2 Ta=+25°C 40 1.0 f=175MHz Vdd=7.2V 30 Idq=200mA 20 0 Pin-Po CHARACTERISTICS 100 4 3 ...
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... R F -IN 62pF 6pF L1: E nam eled wire 9Turns,D :0.43m m ,2.46m 1,C 2:1000pF,0.022uF in parallel RD02MUS1B MITSUBISHI RF POWER MOS FET RD02MUS1B 19m m 15m m RD02MUS1B RD 02MV S1 10pF L3 175MHz 5mm 12m 11.5m m 68O HM 10pF 240pF Note:Board m aterial-Teflon substrate Micro s trip line width=2.2m m /50O HM,er:2.7,t=0.8m m ...
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... Zo=50 175MHz Zout* 520MHz Zin* Zout* Zo=50 520MHz Zin* 520MHz Zout* RD02MUS1B MITSUBISHI RF POWER MOS FET RD02MUS1B Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 Zin*: Complex conjugate of input impedance 175MHz Zin* Zout*: Complex conjugate of input impedance Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA) Freq. S11 [MHz] (mag) 100 0.847 -132.5 135 0.828 -144.6 150 0.824 -148.1 175 0.817 -152.8 200 0.816 -156.2 250 0.816 -161.2 300 0.820 -164 ...
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... These results causes in fire or injury. RD02MUS1B MITSUBISHI RF POWER MOS FET RD02MUS1B warning ! MITSUBISHI ELECTRIC 8/8 30 Jul 2007 ...