rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 2

• Manufacturer Part Number: rd07mvs1-t112
• Description: Silicon Mosfet Power Transistor,175mhz,520mhz,7w
• Manufacturer: Mitsumi Electronics, Corp.

ABSOLUTE MAXIMUM RATINGS
(Tc=25
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
Note : Above parameters , ratings , limits and conditions are subject to change.
RD07MVS1
SYMBOL
SYMBOL
Pout1
Pout2
I
I
KD1
KD2
V
DSS
GSS
TH
°C
UNLESS OTHERWISE NOTED)
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
PARAMETER
PARAMETER
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
OBSERVE HANDLING PRECAUTIONS
Vgs=0V
Vds=0V
Tc=25
Junction to case
Zg=Zl=50
CONDITIONS
°C
MITSUBISHI ELECTRIC
V
V
V
f=175MHz , V
Pin=0.3W,Idq=700mA
f=520MHz , V
Pin=0.7W,Idq=750mA
V
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
V
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
(Tc=25
DS
GS
DS
DD
DD
:
-
-
-
=17V, V
=12V, I
=10V, V
=9.2V,Po=7W(Pin Control)
=9.2V,Po=7W(Pin Control)
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
CONDITIONS
°C
2/9
DS
, UNLESS OTHERWISE NOTED)
GS
DS
=1mA
DD
DD
=0V
=0V
-40 to +125
RATINGS
=7.2V
=7.2V
+/- 20
150
1.5
2.5
30
50
3
MITSUBISHI RF POWER MOS FET
RD07MVS1
UNIT
°C/W
:
:
°C
°C
W
W
V
V
A
MIN
1.4
55
50
7
7
-
-
No destroy
No destroy
LIMITS
TYP
1.7
60
55
8
8
-
-
MAX.
200
2.4
1
-
-
-
-
10 Jan 2006
UNIT
uA
uA
W
%
W
%
V
-
-