q67040-s4276 Infineon Technologies Corporation, q67040-s4276 Datasheet - Page 2

• Manufacturer Part Number: q67040-s4276
• Description: Fast Igbt In Npt-technology
• Manufacturer: Infineon Technologies Corporation

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
j
= 25 °C, unless otherwise specified
R
R
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
i s s
o s s
r s s
G a t e
V
I
V
T
T
I
V
T
T
V
V
V
V
f=1MHz
V
V
PG- TO- 220- 3-1
PG- TO- 247- 3
V
1 00 V≤ V
T
C
C
j
j
C E
j
j
C E
j
G E
G E
C E
C E
G E
C C
G E
G E
=1 000 μA
= 25°C
= 150 °C
=600 μA,V
= 25°C
= 150 °C
≤ 150 °C
PG-TO-220-3-1
2
=1200V,V
=0V,V
=0V,
=20V, I
=25V,
=0V,
= 96 0 V, I
=15V
=15V,t
PG-TO-247-3
= 15 V, I
Conditions
Conditions
C C
G E
≤1 200 V,
S C
C
=20V
C E
=15A
C
C
≤5 μs
G E
=15A
=15A
=V
=0V
G E
1200
min.
2.5
3
-
-
-
-
-
-
-
-
-
-
SGW15N120
SGP15N120
Max. Value
Value
1250
0.63
typ.
100
130
145
3.1
3.7
62
40
11
65
13
4
7
-
-
-
-
Rev. 2.5
max.
1500
200
800
100
120
175
3.6
4.3
80
5
-
-
-
-
Febr. 08
Unit
K/W
Unit
V
μA
nA
S
pF
nC
nH
A