q67040-s4276 Infineon Technologies Corporation, q67040-s4276 Datasheet - Page 3

• Manufacturer Part Number: q67040-s4276
• Description: Fast Igbt In Npt-technology
• Manufacturer: Infineon Technologies Corporation

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
Power Semiconductors
Leakage inductance L
σ
and stray capacity C
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
σ
due to dynamic test circuit in figure E.
j
j
=25 °C
=150 °C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
C
σ
σ
j
j
C C
G E
C C
G E
G
σ
G
σ
= 25°C ,
= 150 °C
=15A,
1 )
1 )
1 )
1 )
= 3 3Ω ,
= 3 3Ω ,
3
= 80 0 V, I
=15V/0V,
= 80 0 V,
=15V/0V,
=1 80nH,
=1 80nH,
=40pF
=40pF
Conditions
Conditions
C
=15A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SGW15N120
SGP15N120
Value
Value
typ.
580
typ.
652
1.1
0.8
1.9
1.9
1.5
3.4
18
23
22
38
30
31
Rev. 2.5
max.
max.
750
780
1.5
1.1
2.6
2.3
2.0
4.3
24
30
29
46
36
37
Febr. 08
Unit
ns
mJ
Unit
ns
mJ