q67050-a4135-a001 Infineon Technologies Corporation, q67050-a4135-a001 Datasheet - Page 2

• Manufacturer Part Number: q67050-a4135-a001
• Description: Standard Igbt2 Igbt Chip In Npt-technology
• Manufacturer: Infineon Technologies Corporation

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Edited by INFINEON Technologies AI PS DD HV3, L 7232-M, Edition 2, 28.11.2003
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
p
limited by T
jmax
jmax
V
V
V
I
I
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
C
I
V
j
C E
G E
C C
G E
G
V
C
= 1 2 5 C
V
=15A
V
=400µA, V
CE
= 1 8
GE
CE
GE
= 2 5 V ,
= 0 V ,
= 15V
Conditions
=300V
Conditions
=600V, V
Conditions
=0V, I
=0V, V
=15V, I
V
I
I
V
T
C
c p u l s
j
CE
G E
, T
Symbol
C
s t g
=500µA
GE
C
GE
=15A
GE
=20V
=V
=0V
1)
SIGC14T60NC
CE
min.
min.
min.
600
1.7
4.5
-55 ... +150
-
-
-
-
-
-
-
Value
600
45
1 )
20
Value
Value
typ.
Value
typ.
typ.
675
110
2.0
5.5
tbd
60
21
25
8
max.
max.
max.
120
2.5
6.5
1.1
-
-
-
-
-
-
-
Unit
°C
Unit
pF
Unit
ns
V
A
A
V
Unit
µA
nA
V