k9f6408u0b-tcb0 Samsung Semiconductor, Inc., k9f6408u0b-tcb0 Datasheet - Page 2

• Manufacturer Part Number: k9f6408u0b-tcb0
• Description: 8m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

8M x 8 Bit NAND Flash Memory
FEATURES
NOTE : Connect all V
K9F6408U0B-TCB0, K9F6408U0B-TIB0
PIN CONFIGURATION
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
- Random Access : 10 s(Max.)
- Serial Page Access : 50ns(Min.)
- Program Time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 years
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
Voltage Supply : 2.7V ~ 3.6V
Do not leave V
CLE
ALE
I/O0
I/O1
I/O2
I/O3
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
V
WE
WP
V
CC
SS
SS
CC
and V
or V
STANDARD TYPE
44(40) TSOP (II)
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
SS
SS
disconnected.
pins of each device to power supply outputs.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
CE
RE
R/B
GND
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
V
CC
CC
2
The K9F6408U0B is a 8M(8,388,608)x8bit NAND Flash Mem-
ory with a spare 256K(262,144)x8bit. Its NAND cell provides the
most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typical 200 s and an erase operation can be performed in typi-
cal 2ms on an 8K-byte block. Data in the page can be read out
at 50ns cycle time per byte. The I/O pins serve as the ports for
address and data input/output as well as command inputs. The
on-chip write controller automates all program and erase func-
tions including pulse repetition, where required, and internal
verification and margining of data. Even the write-intensive sys-
tems can take advantage of the K9F6408U0B s extended reli-
ability of 100K program/erase cycles by providing ECC(Error
Correcting Code) with real time mapping-out algorithm. These
algorithms have been implemented in many mass storage
applications and also the spare 16 bytes of a page combined
with the other 512 bytes can be utilized by system-level ECC.
The K9F6408U0B is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
PIN DESCRIPTION
GENERAL DESCRIPTION
I/O0 ~ I/O7
Pin Name
GND
CLE
ALE
R/B
V
V
N.C
WE
WP
CE
RE
CC
SS
Data Input/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
GND input for enabling spare area
Ready/Busy output
Power
Ground
No Connection
FLASH MEMORY
Pin Function