k9f6408u0b-tcb0 Samsung Semiconductor, Inc., k9f6408u0b-tcb0 Datasheet - Page 7

• Manufacturer Part Number: k9f6408u0b-tcb0
• Description: 8m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
AC TEST CONDITION
(K9F6408U0B-TCB0:T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
K9F6408U0B-TCB0, K9F6408U0B-TIB0
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
program factory-marked bad blocks.
CLE
H
H
X
X
X
X
L
L
L
L
L
K9F6408U0B
2. WP should be biased to CMOS high or CMOS low for standby.
3. When GND input is high, spare area is deselected.
Parameter
ALE
Item
X
H
H
X
X
X
L
L
L
L
L
(1)
IL
Parameter
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
or V
(
T
Parameter
IH.
A
A
CE
=25 C, V
H
L
L
L
L
L
L
L
X
X
X
=0 to 70 C, K9F6408U0B-TIB0:T
CC
WE
H
H
X
X
X
X
Refer to the attached technical notes for a appropriate management of invalid blocks.
=3.3V, f=1.0MHz)
Symbol
Symbol
C
N
C
VB
I/O
IN
Spare Array
Main Array
RE
H
H
H
H
H
H
X
X
X
X
Test Condition
0V/V
GND
L/H
L/H
L/H
L/H
X
X
X
X
X
X
V
V
CC
(3)
(3)
(3)
(3)
1014
IN
IL
Min
Symbol
=0V
(2)
=0V
t
t
A
PROG
Nop
BERS
=-40 to 85 C,
7
0V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
(2)
1 TTL GATE and CL = 100pF
1 TTL GATE and CL = 50pF
Data Input
Write Protect
Stand-by
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Read Mode
Write Mode
Min
-
-
-
-
1020
Typ.
V
Min
CC
-
-
=2.7V~3.6V
0.4V to 2.4V
Value
1.5V
5ns
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
200
2
-
-
FLASH MEMORY
unless otherwise noted)
1024
Max
Max
10
10
Mode
Max
500
2
3
4
. Do not erase or
Blocks
Unit
Unit
pF
pF
cycles
cycles
Unit
ms
s