2PB1219AR NXP [NXP Semiconductors], 2PB1219AR Datasheet - Page 2

• Manufacturer Part Number: 2PB1219AR
• Description: PNP general purpose transistor
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SOT323; SC70 standard mounting conditions.
1999 Apr 12
2PB1219AQ
2PB1219AR
2PB1219AS
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
D∗Q
D∗R
D∗S
(1)
open emitter
open base
open collector
T
amb
2
≤ 25 °C; note 1
PINNING
handbook, halfpage
CONDITIONS
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT323; SC70)
and symbol.
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
MAM048
−60
−50
−5
−500
−1
−200
200
+150
150
+150
Product data sheet
MAX.
2PB1219A
1
3
2
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT