RM20C1A-XXS MITSUBISHI [Mitsubishi Electric Semiconductor], RM20C1A-XXS Datasheet - Page 2

• Manufacturer Part Number: RM20C1A-XXS
• Description: MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*
V
V
V
I
I
I
T
T
V
I
V
t
Q
t
Q
R
R
1
DC
FSM
2 t
RRM
rr
rr
j
stg
RRM
DRM
R (DC)
iso
FM
th (j-c)
th (c-f)
6 class: V
rr
rr
Symbol
Symbol
Symbol
—
—
R
=150V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC current
Surge (non-repetitive) forward current
I
Junction temperature
Storage temperature
Isolution voltage
Mounting torque
Weight
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2 t
for fusing
12class: V
Parameter
Parameter
Parameter
R
=300V
Resistive load, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M5
Typical value
T
T
I
I
Junction to case
Case to fin, conductive grease applied
(T
FM
FM
j
j
=150 C, V
=25 C, I
j
=25 C, unless otherwise noted)
=20A, di/dt=–50A/ s, V
=20A, di/dt=–50A/ s, V
FM
RRM
=20A, instantaneous meas.
C
applied
=93 C
300
360
240
6
Test conditions
Conditions
R
R
=150/300V*
=150/300V*
MITSUBISHI FAST RECOVERY DIODE MODULES
Voltage class
1
1
, Tj=25 C
, Tj=150 C
MEDIUM POWER, HIGH FREQUENCY USE
RM20DA/CA/C1A-XXS
Min.
600
720
480
—
—
—
—
—
—
—
—
12
–40~+150
–40~+125
0.98~1.47
1.47~1.96
6.7 10
Ratings
10~15
15~20
Limits
2500
Typ.
400
1.6
20
90
—
—
—
—
—
—
—
2
INSULATED TYPE
Max.
1.8
0.2
0.5
0.4
1.5
1.2
0.3
10
kg·cm
kg·cm
Feb.1999
Unit
Unit
N·m
N·m
Unit
A
mA
C/ W
C/ W
V
V
V
A
A
V
g
V
2
C
C
C
C
s
s
s