RM20C1A-XXS MITSUBISHI [Mitsubishi Electric Semiconductor], RM20C1A-XXS Datasheet - Page 3

• Manufacturer Part Number: RM20C1A-XXS
• Description: MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
10
10
10
500
450
400
350
300
250
200
150
100
10
10
10
50
–1
REVERSE RECOVERY CHARACTERISTICS
0
3
2
7
5
4
3
2
7
5
4
3
MAXIMUM FORWARD CHARACTERISTIC
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
0.2
ALLOWABLE SURGE (NON-REPETITIVE)
2
1
0
1
1
T
j
=25°C
2
2 3 4 5 7
1.0
Q
FORWARD VOLTAGE (V)
3
FORWARD CURRENT
VS. –di/dt (TYPICAL)
rr
CONDUCTION TIME
(CYCLES AT 60Hz)
4
5
–di/dt (A/ s)
1.8
7
10
10
2
2.6
20
V
2 3 4 5 7
R
Q
t
30
=150/300V
rr
I
rr
rr
T
T
40
3.4
j
j
=25°C
=150°C
I
F
50
=20A
70
100
4.2
10
10
10
3
3
3
–1
0
MITSUBISHI FAST RECOVERY DIODE MODULES
10
10
MAXIMUM TRANSIENT THERMAL IMPEDANCE
MEDIUM POWER, HIGH FREQUENCY USE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
REVERSE RECOVERY CHARACTERISTICS
0
3
2
7
5
4
3
2
7
5
4
3
10
1
0
10
10
VS. FORWARD CURRENT (TYPICAL)
Q
0
–3
di/dt=–50A/µs
0
V
rr
R
2 3 4 5 7
2
RM20DA/CA/C1A-XXS
=150/300V
3
2 3 4 5 7
4
FORWARD CURRENT (A)
T
T
5
j
j
=25°C
=150°C
(JUNCTION TO CASE)
7
10
10
1
–2
2
2
TIME (s)
10
3
3
4
4
1
5
5
7
10
2 3 4 5 7
–1
2
INSULATED TYPE
3
4
I
t
rr
rr
5
7
10
10
10
10
2
3
3
0
–1
0
Feb.1999