TBS6416B4E-7G ETC2 [List of Unclassifed Manufacturers], TBS6416B4E-7G Datasheet - Page 5

• Manufacturer Part Number: TBS6416B4E-7G
• Description: 1M x 16Bit x 4 Banks synchronous DRAM
• Manufacturer: ETC2 [List of Unclassifed Manufacturers]

M
ABSOLUTE MAXIMUM RATING
Note:
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes:
1. V
2. V
3. Any input 0V ≦ V
4. D
Revision_1.1
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
out
Voltage on any pin relative to V
Voltage on VCC supply relative to V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current (Input)
Input leakage current (I/O pins)
.tec
(min) = -2.0V AC. The undershoot voltage duration is ≦ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≦ 3ns.
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to the recommended operating conditions.
Exposure to higher voltage than recommended for extended periods of time could affect device reliability.
is disabled, 0V ≦ V
Parameter
Parameter
IN
≦ VCC
out
≦ VCC
Q,
SS
Q
SS
VCC, VCC
Symbol
V
V
V
V
I
I
OH
OL
IL
IL
IH
IL
VCC, VCC
V
Symbol
Q
IN
T
, V
I
P
STG
OS
D
OUT
Min
Q
-0.3
-1.5
SS
3.0
2.0
2.4
-1
-
= 0V, T
5
TwinMOS Technologies Inc.
A
= 0 to 70°C)
Typ
3.3
3.0
-55 ~ +150
0
-
-
-
-
-1.0 ~ 4.6
-1.0 ~ 4.6
Value
50
1
VCC
Max
3.6
0.8
0.4
1.5
1
Q
-
+0.3
Unit
uA
uA
V
V
V
V
V
TBS6416B4E
Unit
mA
℃
W
V
V
I
OH
I
OL
Note
=-2mA
=2mA
3,4
1
2
3
Sep. 2000