TBS6416B4E-7G ETC2 [List of Unclassifed Manufacturers], TBS6416B4E-7G Datasheet - Page 6

• Manufacturer Part Number: TBS6416B4E-7G
• Description: 1M x 16Bit x 4 Banks synchronous DRAM
• Manufacturer: ETC2 [List of Unclassifed Manufacturers]

M
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Note:
Revision_1.1
Operating current
(One bank active)
Pre-charge standby current
in power- down mode
Pre-charge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
.tec
2.Refresh period is 64 ms.
1.Measured with outputs open.
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
IOL = 0mA
CKE≦V
CKE&CLK≦V
CKE≧V
t
Input signals are stable
CKE≧V
t
Input signals are stable
CKE≦V
CKE&CLK≦V
CKE≧V
t
Input signals are stable
CKE≧V
t
Input signals are stable
I
Page burst
2Banks activated
t
t
CKE≦0.2V
RC
CC
CC
CC
CC
OL
CCD
RC≧
=0 mA
≧t
= 15ns
= ∞
= 15ns
= ∞
t
= 2CLK
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
Test Condition
(max), t
(max), t
(min), /CS≧V
(min), CLK≦V
(min), /CS≧V
(min), CLK≦V
S
IL
IL
(max), t
(max), t
A
CC
CC
= 0 to 70°C)
= 15 ns
= 15 ns
6
CL = 3
CL = 2
CC
CC
IH
IH
IL
IL
TwinMOS Technologies Inc.
(min) ,
(min) ,
(Max) ,
(Max) ,
= ∞
= ∞
TBS6416B4E-7G
100
150
140
160
30
10
40
20
2
2
5
5
1
TBS6416B4E
Unit
mA
mA
mA
mA
mA
mA
mA
mA
Sep. 2000
Note
1
1
2