VND5050J-E_07 STMICROELECTRONICS [STMicroelectronics], VND5050J-E_07 Datasheet
VND5050J-E_07
Related parts for VND5050J-E_07
VND5050J-E_07 Summary of contents
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... S Application ■ All types of resistive, inductive and capacitive loads Description The VND5050K-E and VND5050J-E are monolithic devices made using STMicroelectronics VIPower M0-5 technology. they are intended for driving resistive or inductive loads with one side connected to ground. Active V pin voltage clamp protects the devices ...
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... Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 5.1 ECOPACK 5.2 PowerSSO-12™ package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 5.3 PowerSSO-24™ package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.4 PowerSSO-12™ packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.5 PowerSSO-24™ packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 2/37 Solution 1: resistor in the ground line (RGND only Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . 21 ® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 VND5050J-E / VND5050K-E ...
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... VND5050J-E / VND5050K-E List of tables Table 2. Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 3. Suggested connections for unused and n.c. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 4. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5. Thermal data Table 6. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 7. Switching (VCC = 13V 25° Table 8. Status pin (V =0V Table 9. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 10. Openload detection Table 11. ...
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... PowerSSO-12™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 39. PowerSSO-24™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Figure 40. PowerSSO-12™ tube shipment (no suffix Figure 41. PowerSSO-12™ tape and reel shipment (suffix “TR” Figure 42. PowerSS0-24 tube shipment (no suffix Figure 43. PowerSSO-24 TM tape and reel shipment (suffix “TR”). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 4/ VND5050J-E / VND5050K-E ...
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... VND5050J-E / VND5050K-E 1 Block diagram and pin description Figure 1. Block diagram V CC GND CLAMP INPUT1 STATUS1 STAT_DIS OVERTEMP. 1 INPUT2 STATUS2 Table 2. Pin function Name V Battery connection. CC OUTPUTn Power output. Ground connection. Must be reverse battery protected by an external diode/resistor GND network. Voltage controlled input pin with hysteresis, CMOS compatible. Controls output INPUTn switch state ...
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... OUTPUT 1 10 OUTPUT 1 3 STATUS1 9 OUTPUT OUTPUT 2 STATUS2 PowerSSO-12 STATUS N.C. OUTPUT X X (1) N.R. X VND5050J-E / VND5050K GND. N.C. INPUT1 N.C. N.C. INPUT2 N. PowerSSO-24 INPUT X X Through 10KΩ Through 10KΩ N.R. resistor OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 ...
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... VND5050J-E / VND5050K-E 2 Electrical specifications Figure 3. Current and voltage conventions INn Note OUTn CCn 2.1 Absolute maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied ...
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... Thermal data Table 5. Thermal data Symbol Thermal resistance junction-case (Max.) R thj-case (with one channel ON) Thermal resistance junction-ambient R thj-amb (Max.) 8/37 Parameter Parameter PowerSSO-12 See VND5050J-E / VND5050K-E Value 4000 750 -40 to 150 - 55 to 150 Value PowerSSO-24 2.8 2.8 Figure 31 See Figure 35 Unit V V °C °C Unit ° ...
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... VND5050J-E / VND5050K-E 2.3 Electrical characteristics 8V<V <36V; -40°C< Table 6. Power section Symbol V Operating supply voltage CC V Undervoltage shutdown USD Undervoltage shut-down V USDhyst hysteresis R On state resistance ON V Clamp Voltage clamp I Supply current S Off state output I L(off1) current I Off state output current L(off2) Output - V ...
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... CC 5V<V <36V CC V =13V CC T <T < TSD - >T (see j TSD I =2A; V OUT 0.1A; OUT T = -40°C...+150°C j (see Figure VND5050J-E / VND5050K-E Min. Typ. =0V SD =5V, SD =5V, SD 5.5 -0.7 Min. Typ 150 175 135 7 Figure 4) =0; L=6mH V -41 V -46 CC ...
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... VND5050J-E / VND5050K-E Table 10. Openload detection Symbol Openload On state I OL detection threshold Openload On state t DOL(on) detection delay Delay between INPUT falling edge and STATUS t POL rising edge in Openload condition Openload Off state V voltage detection OL threshold Output short circuit detection delay at DSTKON ...
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... CC > I OUT OL V > V OUT OL t DSTKON INPUT VND5050J-E / VND5050K-E OPEN LOAD STATUS TIMING (with external pull-up) I < OUT STAT t DOL(on) OVER TEMP STATUS TIMING T > TSD STAT t SDL OUTPUT SENSE (V ...
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... VND5050J-E / VND5050K-E Figure 5. Switching characteristics V Figure 6. Output voltage drop limitation OUT 80% dV /dt OUT (on) 10 INPUT t d(on out o T =150 on(T) Electrical specifications 90% dV /dt OUT (off d(off = =- out t t 13/37 ...
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... Test level results III VND5050J-E / VND5050K-E Burst cycle/pulse repetition time 0 0 100 100 ms ( 13.5V except for pulse 5b. CC Contents ...
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... VND5050J-E / VND5050K-E Figure 7. Waveforms INPUT STAT_DIS LOAD CURRENT STATUS V CC INPUT STAT_DIS LOAD CURRENT STATUS INPUT STAT_DIS LOAD VOLTAGE STATUS INPUT STAT_DIS LOAD VOLTAGE LOAD CURRENT STATUS INPUT STAT_DIS LOAD VOLTAGE STATUS T j INPUT STAT_DIS LOAD CURRENT STATUS NORMAL OPERATION UNDERVOLTAGE ...
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... Figure 13. Input hysteresis voltage Vihyst (V) 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 100 125 150 175 -50 VND5050J-E / VND5050K-E High level input current Vin= 2.1V - 100 125 150 Tc (° 100 125 150 Tc (° 100 125 150 Tc (° ...
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... VND5050J-E / VND5050K-E Figure 14. Status low output voltage Vstat (V) 0.9 0.8 I stat= 1.6mA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 - (°C ) Figure 15. Status leakage current Ilstat (uA) 0.055 0.05 Vstat= 5V 0.045 0.04 0.035 0.03 0.025 -50 - (°C ) Figure 17. Status clamp voltage Vscl (V) 9 8.5 I stat= 1mA 8 7.5 7 6.5 6 5.5 5 4.5 4 -50 ...
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... Figure 24. STAT_DIS clamp voltage Vsdcl( 100 125 150 175 -50 VND5050J-E / VND5050K LIM case Vcc= 13V - 100 125 150 Tc (° 100 125 150 Tc (° sd= 1mA -25 0 ...
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... VND5050J-E / VND5050K-E Figure 25. High level STAT_DIS voltage Vsdh( -50 - (°C ) Figure 26. Low level STAT_DIS voltage Vsdl( 100 125 150 175 -50 Electrical specifications - 100 125 150 Tc (°C ) 175 19/37 ...
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... INPUT prot STATUS R prot V GND ). S(on)max ) / (-I ) GND (when V <0: during reverse battery situations) is: GND the input thresholds and the status output S(on)max GND . GND VND5050J-E / VND5050K OUTPUT GND R GND D GND only) GND resistor. GND becomes the sum of the S(on)max D ld ...
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... VND5050J-E / VND5050K-E If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below). 3.1.2 Solution 2: a diode (D A resistor (R =1kΩ) should be inserted in parallel to D GND inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (≈ ...
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... The values of V OLmin section. Figure 28. Open load detection in Off state 22/37 out , V and I are available in the Electrical Characteristics OLmax L(off2) V batt DRI VER INP UT + LOGI TATUS ROUND VND5050J-E / VND5050K-E is pulled high (up to several mA), the pull L(off2) OUT R L ...
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... VND5050J-E / VND5050K-E 3.5 Maximum demagnetization energy (V Figure 29. Maximum turn Off current versus inductance (for each channel) 100 0 150°C single pulse jstart 100°C repetitive pulse jstart 125°C repetitive pulse jstart Note: Values are generated with R demagnetization) of every pulse must not exceed the temperature specified above for curves A and B ...
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... Copper areas: from minimum pad lay-out to 8cm Figure 31. R thj-amb ON) RTHj_amb(°C/ 24/37 and Z measurements (PCB: Double layer, Thermal Vias, FR4 Vs. PCB copper area in open box free air condition (one channel 2 4 PCB Cu heatsink area (cm^2) VND5050J-E / VND5050K ...
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... VND5050J-E / VND5050K-E Figure 32. PowerSSO-12™ thermal impedance junction ambient single pulse (one channel ON) ZTH (°C/W) 100 10 1 0,1 0,0001 0,001 Equation 1: pulse calculation formula ⋅ Z THδ where δ Figure 33. Thermal fitting model of a double channel HSD in PowerSSO-12™ (a )The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered ...
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... Package and PCB thermal data Table 14. PowerSSO-12™ thermal parameters Area/island (cm R1= R7 (°C/W) R2= R8 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1= C7 (W.s/°C) C2= C8 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) 26/ Footprint 0.7 2 0.001 0.0025 0.05 0.2 0.27 3 VND5050J-E / VND5050K 0.1 0.1 0 ...
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... VND5050J-E / VND5050K-E 4.2 PowerSSO-24™ thermal data Figure 34. PowerSSO-24™ PC board Note: Layout condition of R area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side), Copper areas: from minimum pad lay-out to 8cm Figure 35. R thj-amb ON) RTHj_amb(° ...
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... Figure 37. Thermal fitting model of a double channel HSD in PowerSSO-24™ (b )The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered. 28/37 δ Z THtp 1 δ – VND5050J-E / VND5050K-E (b) ...
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... VND5050J-E / VND5050K-E Table 15. PowerSSO-24™ thermal parameters Area/island (cm R1=R7 (°C/W) R2=R8 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1=C7 (W.s/°C) C2=C8 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/° Footprint 0 7 0.001 0.0022 0.025 0.75 1 2.2 Package and PCB thermal data 29/37 ...
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... Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: www.st.com. 5.2 PowerSSO-12™ package information Figure 38. PowerSSO-12™ package dimensions 30/37 packages VND5050J-E / VND5050K-E ® ...
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... VND5050J-E / VND5050K-E Table 16. PowerSSO-12™ mechanical data Symbol ddd Package and packing information Millimeters Min. Typ. 1.25 0 1.10 0.23 0.19 4.8 3.8 0.8 5.8 0.25 0.4 0° 1.9 3.6 Max. 1.62 0.1 1.65 0.41 0.25 5.0 4.0 6.2 0.5 1.27 8° 2.5 4.2 0.1 31/37 ...
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... Package and packing information 5.3 PowerSSO-24™ package information Figure 39. PowerSSO-24™ package dimensions Table 17. PowerSSO-24™ mechanical data Symbol 32/37 Millimeters Min. Typ. 2.15 2.15 0 0.33 0.23 10.10 7.4 0.8 8.8 VND5050J-E / VND5050K-E Max. 2.47 2.40 0.075 0.51 0.32 10.50 7.6 0.1 0.06 ...
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... VND5050J-E / VND5050K-E Table 17. PowerSSO-24™ mechanical data (continued) Symbol Package and packing information Millimeters Min. Typ. 10.1 0.55 4.1 6.5 Max. 10.5 0.4 0.85 10deg 4.7 7.1 33/37 ...
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... B C (± 0.1) All dimensions are in mm (± 0. (± 0.05) 1.5 D1 (min) 1.5 F (± 0.1) 5.5 K (max) 4.5 P1 (± 0.1) 2 End Top cover 500mm min tape VND5050J-E / VND5050K-E 100 2000 532 1.85 6.75 0.6 REEL DIMENSIONS Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± -0) 12.4 N (min (max) 18 ...
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... VND5050J-E / VND5050K-E 5.5 PowerSSO-24™ packing information Figure 42. PowerSS0- Figure 43. PowerSSO-24 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing All dimensions are in mm. ...
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... Figure 32: PowerSSO-12™ thermal impedance 4 junction ambient single pulse (one channel – Updated Table 14: PowerSSO-12™ thermal R3 value changed from °C/W. R4 values changed from 10 /10 / °C/W. VND5050J-E / VND5050K-E Changes ratings: E entries updated. MAX :Test level values III : added notes. ...
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... VND5050J-E / VND5050K-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...