MT4C1M16E5 Micron Technology, MT4C1M16E5 Datasheet - Page 14

• Manufacturer Part Number: MT4C1M16E5
• Description: EDO DRAM
• Manufacturer: Micron Technology

TIMING PARAMETERS
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
ACH
AR
ASC
AWD
ASR
CAC
CAH
CAS
CLCH
CLZ
CRP
CSH
CWD
CWL
DH
CASL#/CASH#
ADDR
WE#
RAS#
OE#
DQ
V
V
V
V
V
V
V
V
V
V
V
V
IOH
IOL
MIN
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
12
38
42
38
28
0
0
8
8
5
0
5
8
8
-5
10,000
MAX
25
13
t CRP
t ASR
(LATE WRITE and READ-MODIFY-WRITE cycles)
ROW
MIN
15
45
49
10
10
45
35
10
10
0
0
5
0
5
t RAD
t RAH
t AR
-6
10,000
MAX
30
15
READ-WRITE CYCLE
t RCD
UNITS
OPEN
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t ASC
t RCS
t RWC
t RAS
t CLZ
COLUMN
14
t CAH
t RSH
t CSH
t CAS, CLCH
t CWD
t RWD
t AWD
t AA
t RAC
t CAC
t OE
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DS
OD
OE
OEH
RAC
RAD
RAH
RAS
RCD
RCS
RP
RSH
RWC
RWD
RWL
WP
t
VALID D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUT
t OD
t DS
VALID D
MIN
116
50
11
30
13
67
13
0
0
8
9
9
0
5
t ACH
t CWL
t RWL
t WP
t DH
IN
-5
t OEH
16Mb: 1 MEG x16
10,000
MAX
12
12
50
MIN
OPEN
140
t RP
10
12
10
60
14
40
15
79
15
0
0
0
5
EDO DRAM
DON’T CARE
UNDEFINED
-6
ROW
©2001, Micron Technology, Inc
10,000
MAX
15
15
60
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns