MT4C1M16E5 Micron Technology, MT4C1M16E5 Datasheet - Page 7

• Manufacturer Part Number: MT4C1M16E5
• Description: EDO DRAM
• Manufacturer: Micron Technology

I
(Notes: 1, 2, 3, 5, 8; notes appear on pages 10-11); (V
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
CC
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
STANDBY CURRENT: CMOS (non-“S” version only)
(RAS# = CAS# = other inputs = V
STANDBY CURRENT: CMOS (“S” version only)
(RAS# = CAS# = other inputs = V
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
OPERATING CURRENT: EDO PAGE MODE
Average power supply current (RAS# = V
address cycling:
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or CBR cycling;
RAS# =
D
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with RAS#
and CAS# held LOW; WE# = V
OE# and D
IN
OPERATING CONDITIONS AND MAXIMUM LIMITS
= V
DD
t
RAS (MIN); WE# = V
- 0.2V or 0.2V (D
IN
= V
DD
t
PC =
IH
- 0.2V or 0.2V (D
)
t
PC [MIN])
IH
:
IN
t
RC =
DD
may be left open);
DD
t
t
RC =
RC =
- 0.2V; A0-A10, OE# and
DD
DD
- 0.2V; A0-A10,
t
RC [MIN])
IN
- 0.2V)
- 0.2V)
t
t
RC [MIN])
RC [MIN])
may be left open)
IL
, CAS#,
t
RASS (MIN)
t
RC = 125µs
CC
[MIN]
7
SYMBOL SPEED
V
CC
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I
I
I
I
I
I
CC
CC
CC
CC
CC
CC
CC
CC
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1
2
3
4
5
6
7
8
2
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
[MAX])
ALL
ALL
ALL
ALL
ALL
-5
-6
-5
-6
-5
-6
-5
-6
16Mb: 1 MEG x16
3.3V
500
150
180
170
140
130
180
170
180
170
300
300
1
500
150
190
180
150
140
190
180
180
170
300
300
5V
2
EDO DRAM
UNITS NOTES
©2001, Micron Technology, Inc
mA
mA
mA
mA
mA
µA
µA
µA
µA
7, 9
7, 9
7, 9
6
6