IS61LV25616AL-10B Integrated Silicon Solution Inc, IS61LV25616AL-10B Datasheet - Page 11

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IS61LV25616AL-10B

Manufacturer Part Number
IS61LV25616AL-10B
Description
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Manufacturer
Integrated Silicon Solution Inc
Datasheet

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IS61LV25616AL
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. A
02/21/03
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
Typical values are measured at V
1.65V
1.4V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
CE
DD
V
V
DD
DR
for Data Retention
DD
= 3.0V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
DD
= 2.0V, CE V
(CE Controlled)
A
= 25
O
C and not 100% tested.
DD
Data Retention Mode
CE
– 0.2V
1-800-379-4774
V
DD
- 0.2V
Options
(LL)
Com.
Ind.
Min.
2.0
t
RC
0
t
RDR
Typ.
5
(1)
Max.
ISSI
3.6
10
15
Unit
mA
ns
ns
V
11
®
1
2
3
4
5
6
7
8
9
10
11
12

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