KM684000C Samsung, KM684000C Datasheet - Page 2
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KM684000C
Manufacturer Part Number
KM684000C
Description
512Kx8 bit Low Power CMOS Static RAM
Manufacturer
Samsung
Datasheet
1.KM684000C.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KM684000CLG-7L
Manufacturer:
SEC
Quantity:
13
VSS
512Kx8 bit Low Power CMOS Static RAM
FEATURES
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
I/O1
I/O2
I/O3
A16
A14
A12
KM684000C Family
A18
KM684000CL
KM684000CL-L
KM684000CLI
KM684000CLI-L
A7
A6
A5
A4
A3
A2
A1
A0
Process Technology: TFT
Organization: 512Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
Product Family
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
I/O
32-TSOP2
(Forward)
A
32-SOP
32-DIP
0
WE
Vcc
Vss
CS
OE
1
~A
~I/O
18
8
32-TSOP2-400F/R
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Operating Temperature
Commercial (0~70 C
Inderstrial (-40~85 C
A17
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Write Enable Input
Chip Select Input
Output Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
I/O8
I/O7
I/O6
I/O5
I/O4
WE
CS
VCC
OE
A15
A17
A13
A11
A10
A8
A9
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Function
32-TSOP2
(Reverse)
Vcc Range
4.5~5.5V
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
VSS
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
2
55
FUNCTIONAL BLOCK DIAGRAM
Speed
1)
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up oper-
ation with low data retention current.
/70ns
The KM684000C families are fabricated by SAMSUNG s
CS
WE
OE
I/O
I/O
1
8
Control
logic
(I
Standby
SB1
100 A
80 A
20 A
30 A
Power Dissipation
, Max)
Clk gen.
Data
cont
Data
cont
Row
select
(I
Operating
CC2
55mA
, Max)
CMOS SRAM
Precharge circuit.
Memory array
1024 rows
512 8 columns
Column select
I/O Circuit
32-DIP,32-SOP
32-TSOP2-F/R
32-SOP
32-TSOP2-F/R
PKG Type
Revision 1.0
April 1999